EFFECTS OF SEMI-INSULATING GALLIUM ARSENIDE SUBSTRATE ORIENTATIONS AND SPIN COATING SPEED ON THE ELECTRICAL PERFORMANCE OF PANI/SI-GAAS HYBRID PHOTODETECTOR DEVICES
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PANI, SI-GaAs orientation, Photodetector device, spin coating deposition, external quantum efficiency
Abstract
This article presents the influence of semi-insulating gallium arsenide (SI-GaAs) orientations and spin coating speed (rotation per minute, rpm) on the electrical performance of hybrid organic/inorganic photodetector devices. Hybrid polyaniline (PANI)/SI-GaAs/Ag photodetector devices were fabricated by depositing PANI thin films on (111) A and (111)B SI-GaAs substrates at speeds of 2000 rpm and 3000 rpm using the spin coating technique. Device performance, evaluated through current–voltage (I–V) measurements under dark conditions and illumination with 532 nm light at varying power intensities, revealed a notable dependence on both substrate orientation and spin speed. The PANI/(111)B SI-GaAs at 2000 rpm devices revealed optimal performance at 0.58 mW.cm-2 with a photo response ratio of 3.16, responsivity (R) of 0.362 mA/W, detectivity (D*) of 2.05x109 Jones, and external quantum efficiency (EQE%) of 8.44x10-2. The PANI/(111)B SI-GaAs devices fabricated at spin rates of 2000 rpm exhibit a decreasing trend in all three photodetector performance parameters with increasing light power intensity, while the PANI/(111)B SI-GaAs at 3000 rpm device increases slightly with increasing intensity, except at 0.75 mW·cm⁻², where it decreases. In contrast, the (111)A-based devices exhibited a consistent performance increase with rising light intensity from 0.58 mW.cm-2 to 1.52 mW.cm-2 across both spin rates. This approach of integrating organic and inorganic materials opens opportunities for producing flexible, high-performance, low-cost photodetectors for various optoelectronic applications
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